Part Number SQ4949EY-T1_GE3 Categories MOSFET RoHS Datasheet SQ4949EY-T1_GE3 Description MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Dual Fall Time 8 ns Id - Continuous Drain Current 7.5 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 3.3 W Product Type MOSFET Qg - Gate Charge 30 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 28 mOhms Rise Time 9 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 2 P-Channel Typical Turn-Off Delay Time 28 ns Typical Turn-On Delay Time 7 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V