Part Number SQ4940AEY-T1_GE3 Categories MOSFET RoHS Datasheet SQ4940AEY-T1_GE3 Description MOSFET 40V 8A 4W AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Dual Fall Time 9 ns, 9 ns Forward Transconductance - Min 33 S, 33 S Height 1.75 mm Id - Continuous Drain Current 8 A Length 4.9 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 4 W Product Type MOSFET Qg - Gate Charge 43 nC, 43 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 20 mOhms, 20 mOhms Rise Time 13 ns, 13 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 2 N-Channel Typical Turn-Off Delay Time 20 ns, 20 ns Typical Turn-On Delay Time 8 ns, 8 ns Unit Weight Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V Width 3.9 mm