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SQ4920EY-T1_GE3

SQ4920EY-T1_GE3
Images are for reference only
Part Number
SQ4920EY-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 30V 8A 4.4W AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns, 8 ns
Forward Transconductance - Min
43 S, 43 S
Height
1.75 mm
Id - Continuous Drain Current
8 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
4.4 W
Product Type
MOSFET
Qg - Gate Charge
30 nC, 30 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
13 mOhms
Rise Time
10 ns, 10 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
25 ns, 25 ns
Typical Turn-On Delay Time
7 ns, 7 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
3.9 mm

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packed pretty good, all is ok,-seller.
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