Part Number SQ4917EY-T1_GE3 Categories MOSFET RoHS Datasheet SQ4917EY-T1_GE3 Description MOSFET Dual P-Channel 60V AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Dual Fall Time 6 ns, 6 ns Forward Transconductance - Min 13 S, 13 S Id - Continuous Drain Current 8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 5 W Product Type MOSFET Qg - Gate Charge 65 nC, 65 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 40 mOhms, 40 mOhms Rise Time 11 ns, 11 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 2 P-Channel Typical Turn-Off Delay Time 35 ns, 35 ns Typical Turn-On Delay Time 11 ns Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V