SQ4961EY-T1_GE3

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Part Number
SQ4961EY-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET Dual P-Channel 60V AEC-Q101 Qualified

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns
Forward Transconductance - Min
9 S
Height
1.75 mm
Id - Continuous Drain Current
4.4 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.3 W
Product Type
MOSFET
Qg - Gate Charge
40 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
13 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
36 ns
Typical Turn-On Delay Time
11 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
3.9 mm

Latest Reviews

Thanks for your feedback!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Good material. Great seller, efficient and insurance. Ok

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