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SQ1922EEH-T1_GE3

SQ1922EEH-T1_GE3
Images are for reference only
Part Number
SQ1922EEH-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Configuration
Dual
Fall Time
6 ns
Id - Continuous Drain Current
840 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SC-70-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
700 pC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
350 mOhms
Rise Time
12 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
1 V

Porduct Category

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