Part Number SQ1912EH-T1_GE3 Categories MOSFET RoHS Datasheet SQ1912EH-T1_GE3 Description MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Dual Fall Time 17 ns, 17 ns Forward Transconductance - Min 2.6 S, 2.6 S Id - Continuous Drain Current 800 mA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SOT-363-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1.5 W Product Type MOSFET Qg - Gate Charge 1.15 nC, 1.15 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 200 mOhms, 200 mOhms Rise Time 21 ns, 21 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 2 N-Channel Typical Turn-Off Delay Time 19 ns, 19 ns Typical Turn-On Delay Time 3 ns, 3 ns Unit Weight Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 12 V Vgs th - Gate-Source Threshold Voltage 450 mV