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SQ1922AEEH-T1_GE3

SQ1922AEEH-T1_GE3
Images are for reference only
Part Number
SQ1922AEEH-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET Dual Nch 20V Vds SOT-363
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
6 ns
Id - Continuous Drain Current
0.85 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
1.2 nC
Rds On - Drain-Source Resistance
300 mOhms
Rise Time
9.6 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
8 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Porduct Category

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Latest Reviews

Write Your Own Reivew
Shipping a little 1 weeks, normal packing, the procedure is complete.
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
All very good. AND packed as you have everything in good condition.
No problem, with no contact, selectively checked a few pieces, such as running
to seller thank you! all like the photo. not tried operation. seller store recommend.
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