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SQ1912AEEH-T1_GE3

SQ1912AEEH-T1_GE3
Images are for reference only
Part Number
SQ1912AEEH-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
390 ns
Forward Transconductance - Min
2.6 S
Height
1 mm
Id - Continuous Drain Current
800 mA
Length
2.1 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
1.25 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
200 mOhms
Rise Time
108 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
715 ns
Typical Turn-On Delay Time
66 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
450 mV
Width
1.25 mm

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