Part Number SQ2310ES-T1_GE3 Categories MOSFET RoHS Datasheet SQ2310ES-T1_GE3 Description MOSFET 20V 6A 2W AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Single Fall Time 9 ns Forward Transconductance - Min 27 S Id - Continuous Drain Current 6 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-236-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 2 W Product Type MOSFET Qg - Gate Charge 8.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 24 mOhms Rise Time 8 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 21 ns Typical Turn-On Delay Time 7 ns Unit Weight Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 8 V Vgs th - Gate-Source Threshold Voltage 400 mV