Part Number SQ2301ES-T1_GE3 Categories MOSFET RoHS Datasheet SQ2301ES-T1_GE3 Description MOSFET P-Channel 20V AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Single Fall Time 9 ns Forward Transconductance - Min 7 s Height 1.45 mm Id - Continuous Drain Current 3.9 A Length 2.9 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3 W Product Type MOSFET Qg - Gate Charge 5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 120 mOhms Rise Time 14 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 15 ns Unit Weight Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 4.5 V Vgs th - Gate-Source Threshold Voltage 450 mV Width 1.6 mm