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SQ2303ES-T1_GE3

SQ2303ES-T1_GE3
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Part Number
SQ2303ES-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P-Channel 30V AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
4 s
Id - Continuous Drain Current
2.5 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.9 W
Product Type
MOSFET
Qg - Gate Charge
4.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
8 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
12 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Latest Reviews

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Quick delivery. Secure packing. Excellent product. Thank you
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Perfectly.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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