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SQ3985EV-T1_GE3

SQ3985EV-T1_GE3
Images are for reference only
Part Number
SQ3985EV-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
20 ns, 20 ns
Forward Transconductance - Min
7 S, 7 S
Id - Continuous Drain Current
3.9 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
4.6 nC, 4.6 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
130 mOhms
Rise Time
26 ns, 26 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
40 ns, 40 ns
Typical Turn-On Delay Time
5 ns, 5 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Latest Reviews

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everything as it is written in the description of the same deductible prodovtsu deserved
packed pretty good, all is ok,-seller.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Everything is fine!
I received the product right, thank you very much 2018/12/03 ★★★★★
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