Part Number SQ3987EV-T1_GE3 Categories MOSFET RoHS Datasheet SQ3987EV-T1_GE3 Description MOSFET Dual P-Ch -30V AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Dual Fall Time 2.2 ns, 2.2 ns Forward Transconductance - Min 4.2 S, 4.2 S Id - Continuous Drain Current 3 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1.67 W Product Type MOSFET Qg - Gate Charge 12.2 nC, 12.2 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 85 mOhms, 85 mOhms Rise Time 2.4 ns, 2.4 ns Series SQ3987EV Technology SI Transistor Polarity P-Channel Transistor Type 2 P-Channel Typical Turn-Off Delay Time 18.4 ns, 18.4 ns Typical Turn-On Delay Time 6.6 ns, 6.6 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V