Part Number SQ3989EV-T1_GE3 Categories MOSFET RoHS Datasheet SQ3989EV-T1_GE3 Description MOSFET Dual P-Channel 30V TSOP-6
Categories MOSFET Channel Mode Enhancement Configuration Dual Fall Time 2 ns Forward Transconductance - Min 2.2 S Id - Continuous Drain Current 2.5 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 1.67 W Product Type MOSFET Qg - Gate Charge 11.1 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 140 mOhms Rise Time 3 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 2 P-Channel Typical Turn-Off Delay Time 13.8 ns Typical Turn-On Delay Time 5.7 ns Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V