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SQ1470AEH-T1_GE3

SQ1470AEH-T1_GE3
Images are for reference only
Part Number
SQ1470AEH-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
14 S
Height
1 mm
Id - Continuous Drain Current
1.7 A
Length
2.1 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.3 W
Product Type
MOSFET
Qg - Gate Charge
5.2 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
45 mOhms
Rise Time
13 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
14 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
600 mV
Width
1.25 mm

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Latest Reviews

Write Your Own Reivew
Takes 8 days to Japan. Good!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
The timer is running. 10 PCS. Packed properly.
Everything is fine!
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