Part Number SQ1421EDH-T1_GE3 Categories MOSFET RoHS Datasheet SQ1421EDH-T1_GE3 Description MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Single Fall Time 9 ns Forward Transconductance - Min 3 s Height 1 mm Id - Continuous Drain Current 1.6 A Length 2.1 mm Maximum Operating Temperature + 100 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-363-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 2.7 W Product Type MOSFET Qg - Gate Charge 5.4 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 230 mOhms Rise Time 25 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 13 ns Typical Turn-On Delay Time 44 ns Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V Width 1.25 mm