Part Number SQ1440EH-T1_GE3 Categories MOSFET RoHS Datasheet SQ1440EH-T1_GE3 Description MOSFET 60V Vds +/-20V Vgs AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Single Fall Time 30 ns Forward Transconductance - Min 6 s Height 1 mm Id - Continuous Drain Current 1.7 A Length 2.1 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-363-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3.3 W Product Type MOSFET Qg - Gate Charge 5.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 85 mOhms Rise Time 23 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 10 ns Typical Turn-On Delay Time 5.8 ns Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V Width 1.25 mm