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SQ2364EES-T1_GE3

SQ2364EES-T1_GE3
Images are for reference only
Part Number
SQ2364EES-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13 ns
Forward Transconductance - Min
8.8 S
Id - Continuous Drain Current
2 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
2.5 nC
Rds On - Drain-Source Resistance
240 mOhms
Rise Time
11 ns
Technology
SI
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
26 ns
Typical Turn-On Delay Time
6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
460 mV

Porduct Category

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Latest Reviews

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Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Yes, they are all here. :)
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
fast delivery
the photo in comparison with cheap. Delivery fast
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