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SQ2389ES-T1_GE3

SQ2389ES-T1_GE3
Images are for reference only
Part Number
SQ2389ES-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
4 ns
Forward Transconductance - Min
5 s
Id - Continuous Drain Current
4.1 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
8.2 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
94 mOhms
Rise Time
12 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
16 ns
Typical Turn-On Delay Time
7 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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My package arrived wet, not know where occurs this fact, but working all right
packed pretty good, all is ok,-seller.
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