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SQ2315ES-T1_GE3

SQ2315ES-T1_GE3
Images are for reference only
Part Number
SQ2315ES-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P-Channel 12V AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13 ns
Forward Transconductance - Min
7 s
Height
1.45 mm
Id - Continuous Drain Current
5 A
Length
2.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
9 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
50 MOhms
Rise Time
19 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
28 ns
Typical Turn-On Delay Time
17 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
12 V
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
450 mV
Width
1.6 mm

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Latest Reviews

Write Your Own Reivew
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Goods came in two weeks. Well packed. Track number tracked
Shipping a little 1 weeks, normal packing, the procedure is complete.
Long Service and Russia!
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