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SQ2337ES-T1_GE3

SQ2337ES-T1_GE3
Images are for reference only
Part Number
SQ2337ES-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P-Channel 80V AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
3.5 s
Height
1.45 mm
Id - Continuous Drain Current
2.2 A
Length
2.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
11.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
290 mOhms
Rise Time
10 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
18 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
80 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
1.6 mm

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