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SQ2319ADS-T1_GE3

SQ2319ADS-T1_GE3
Images are for reference only
Part Number
SQ2319ADS-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
17 ns
Forward Transconductance - Min
8 s
Height
1.45 mm
Id - Continuous Drain Current
4.6 A
Length
2.9 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
2.5 W
Product Type
MOSFET
Qg - Gate Charge
10.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
75 mOhms
Rise Time
18 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
17 ns
Typical Turn-On Delay Time
4 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
1.6 mm

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Latest Reviews

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Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Yes, they are all here. :)
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
fast delivery
the photo in comparison with cheap. Delivery fast
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