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SQ2362ES-T1_GE3

SQ2362ES-T1_GE3
Images are for reference only
Part Number
SQ2362ES-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N-Channel 60V AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
18 ns
Forward Transconductance - Min
10 s
Id - Continuous Drain Current
4.3 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
MouseReel
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
7.6 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
68 mOhms
Rise Time
20 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
14 ns
Typical Turn-On Delay Time
6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Latest Reviews

Write Your Own Reivew
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Hello! Order received, very happy. Thank you very much!
Perfectly.
Goods came in two weeks. Well packed. Track number tracked
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