SQ2361ES-T1_GE3

Images are for reference only
Part Number
SQ2361ES-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
4 ns
Forward Transconductance - Min
5 s
Id - Continuous Drain Current
2.8 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
12 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
130 mOhms
Rise Time
9 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
22 ns
Typical Turn-On Delay Time
8 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Latest Reviews

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

fast delivery

The goods are OK, thank you dealers.

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

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