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SQ2325ES-T1_GE3

SQ2325ES-T1_GE3
Images are for reference only
Part Number
SQ2325ES-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Forward Transconductance - Min
2.2 S
Id - Continuous Drain Current
840 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
10 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
1.3 Ohms
Rise Time
14 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
8 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
150 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V

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Latest Reviews

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Very good!
Quick delivery. Secure packing. Excellent product. Thank you
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packed pretty good, all is ok,-seller.
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
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