RQ3E100BNTB

Images are for reference only
Part Number
RQ3E100BNTB
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 4.5V Drive Nch MOSFET

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
13.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
15 W
Product Type
MOSFET
Qg - Gate Charge
22 nC
Rds On - Drain-Source Resistance
7.7 mOhms
Rise Time
28 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
44 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

Latest Reviews

everything as it is written in the description of the same deductible prodovtsu deserved

Received, Fast shipping, not checked yet

it is safe and sound all, thank you seller!

packed pretty good, all is ok,-seller.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Related keywords for RQ3E

  • RQ3E100BNTB Integrated
  • RQ3E100BNTB RoHS
  • RQ3E100BNTB PDF Datasheet
  • RQ3E100BNTB Datasheet
  • RQ3E100BNTB Part
  • RQ3E100BNTB Buy
  • RQ3E100BNTB Distributor
  • RQ3E100BNTB PDF
  • RQ3E100BNTB Component
  • RQ3E100BNTB ICs
  • RQ3E100BNTB Download PDF
  • RQ3E100BNTB Download datasheet
  • RQ3E100BNTB Supply
  • RQ3E100BNTB Supplier
  • RQ3E100BNTB Price
  • RQ3E100BNTB Data sheet
  • RQ3E100BNTB Image
  • RQ3E100BNTB Picture
  • RQ3E100BNTB Inventory
  • RQ3E100BNTB Stock
  • RQ3E100BNTB Original
  • RQ3E100BNTB Cheapest
  • RQ3E100BNTB Excellent
  • RQ3E100BNTB Lead free
  • RQ3E100BNTB Specification
  • RQ3E100BNTB Hot offers
  • RQ3E100BNTB Break Price
  • RQ3E100BNTB Technical Data