RQ3E070BNTB

Images are for reference only
Part Number
RQ3E070BNTB
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 4.5V Drive Nch MOSFET

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5 ns
Forward Transconductance - Min
4 s
Id - Continuous Drain Current
7 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
8.9 nC
Rds On - Drain-Source Resistance
20 mOhms
Rise Time
8 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
23 ns
Typical Turn-On Delay Time
6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

Latest Reviews

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Quickly came to CET, all in one package. Look at the rules

it is safe and sound all, thank you seller!

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Works. Recommend

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