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SQ4435EY-T1_GE3

SQ4435EY-T1_GE3
Images are for reference only
Part Number
SQ4435EY-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P-Channel 30V AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Forward Transconductance - Min
22 S
Height
1.75 mm
Id - Continuous Drain Current
15 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
6.8 W
Product Type
MOSFET
Qg - Gate Charge
58 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
13 mOhms
Rise Time
9 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
45.3 ns
Typical Turn-On Delay Time
12.5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
3.9 mm

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Latest Reviews

Write Your Own Reivew
Takes 8 days to Japan. Good!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
The timer is running. 10 PCS. Packed properly.
Everything is fine!
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