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SQ4425EY-T1_GE3

SQ4425EY-T1_GE3
Images are for reference only
Part Number
SQ4425EY-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P-Channel 30V AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13 ns
Height
1.75 mm
Id - Continuous Drain Current
18 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
6.8 W
Product Type
MOSFET
Qg - Gate Charge
50 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
9 mOhms
Rise Time
9 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
54 ns
Typical Turn-On Delay Time
12 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
3.9 mm

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