RQ3E180GNTB

Images are for reference only
Part Number
RQ3E180GNTB
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 4.5V Drive Nch MOSFET

Specifications

Categories
MOSFET
Configuration
Single
Fall Time
10.2 ns
Forward Transconductance - Min
17 S
Id - Continuous Drain Current
18 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
22.4 nC
Rds On - Drain-Source Resistance
4.3 mOhms
Rise Time
6.9 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
56.8 ns
Typical Turn-On Delay Time
16.5 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Latest Reviews

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

packed pretty good, all is ok,-seller.

Shipping a little 1 weeks, normal packing, the procedure is complete.

Fast shippng. Good quality. I recomend this seller.

The goods are OK, thank you dealers.

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