RQ3E120BNTB

Images are for reference only
Part Number
RQ3E120BNTB
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 4.5V Drive Nch MOSFET

Specifications

Categories
MOSFET
Configuration
Single
Fall Time
12 ns
Id - Continuous Drain Current
12 A
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
29 nC
Rds On - Drain-Source Resistance
6.6 mOhms
Rise Time
30 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
46 ns
Typical Turn-On Delay Time
9 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Latest Reviews

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

packed pretty good, all is ok,-seller.

Shipping a little 1 weeks, normal packing, the procedure is complete.

Fast shippng. Good quality. I recomend this seller.

The goods are OK, thank you dealers.

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