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TP0620N3-G

TP0620N3-G
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Part Number
TP0620N3-G
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 200V 12Ohm
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
16 ns
Height
5.33 mm
Id - Continuous Drain Current
175 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
1 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
12 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Type
FET
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
200 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

Porduct Category

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Latest Reviews

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Takes 8 days to Japan. Good!
it is safe and sound all, thank you seller!
Hello! Order received, very happy. Thank you very much!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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