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TP0606N3-G

TP0606N3-G
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Part Number
TP0606N3-G
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 60V 3.5Ohm
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
15 ns
Forward Transconductance - Min
300 ms
Height
5.33 mm
Id - Continuous Drain Current
320 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
1 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
3.5 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Type
FET
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1 V
Width
4.19 mm

Porduct Category

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Latest Reviews

Write Your Own Reivew
My package arrived wet, not know where occurs this fact, but working all right
Quick delivery. Secure packing. Excellent product. Thank you
Takes 8 days to Japan. Good!
packed pretty good, all is ok,-seller.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
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