- Part Number
- RQ3E180BNTB
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET 4.5V Drive Nch MOSFET
RQ3E180BNTB
Images are for reference only
Specifications
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Single
- Fall Time
- 79 ns
- Id - Continuous Drain Current
- 39 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 20 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 72 nC
- Rds On - Drain-Source Resistance
- 2.8 mOhms
- Rise Time
- 63 ns
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 138 ns
- Typical Turn-On Delay Time
- 14 ns
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Latest Reviews
fast delivery, item as described, thanks!!
Sandra Scheck
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
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