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SQ3461EV-T1_GE3

SQ3461EV-T1_GE3
Images are for reference only
Part Number
SQ3461EV-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
71 ns
Forward Transconductance - Min
21 S
Height
1.1 mm
Id - Continuous Drain Current
8 A
Length
3.05 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
MouseReel
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
28 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
21 mOhms
Rise Time
52 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
92 ns
Typical Turn-On Delay Time
12 ns
Vds - Drain-Source Breakdown Voltage
12 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
1 V
Width
1.65 mm

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Latest Reviews

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Teşekkürler
fast delivery, item as described, thanks!!
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Yes, they are all here. :)
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