Part Number SQ3418EV-T1_GE3 Categories MOSFET RoHS Datasheet SQ3418EV-T1_GE3 Description MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
Categories MOSFET Channel Mode Enhancement Configuration Single Fall Time 37 ns Forward Transconductance - Min 21 S Id - Continuous Drain Current 8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 5 W Product Type MOSFET Qg - Gate Charge 12.7 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 26 mOhms Rise Time 28 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 12 ns Typical Turn-On Delay Time 6 ns Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V