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SQ3426EV-T1_GE3

SQ3426EV-T1_GE3
Images are for reference only
Part Number
SQ3426EV-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
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Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
7 ns
Forward Transconductance - Min
21 S
Id - Continuous Drain Current
7 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
12 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
32 mOhms
Rise Time
12 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
19 ns
Typical Turn-On Delay Time
9 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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