RQ3E100ATTB

Images are for reference only
Part Number
RQ3E100ATTB
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET PCH -30V -31A POWER

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
50 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
17 W
Product Type
MOSFET
Qg - Gate Charge
42 nC
Rds On - Drain-Source Resistance
11.4 mOhms
Rise Time
14 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
12 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

Latest Reviews

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Everything is excellent! recommend this seller!

Decent quality, not минвелл certainly, but enough decent

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goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

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