- Part Number
- IKFW50N60DH3EXKSA1
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors HOME APPLIANCES 14
IKFW50N60DH3EXKSA1
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 40 A
- Continuous Collector Current Ic Max
- 60 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 30 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- PG-TO247-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 130 W
- Product Type
- IGBT Transistors
- Technology
- SI
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Latest Reviews
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
all is well. checked work. seller recommend.
Maurice E.
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