- Part Number
- IKFW50N60DH3XKSA1
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors INDUSTRY 14
IKFW50N60DH3XKSA1
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.85 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 53 A
- Continuous Collector Current Ic Max
- 60 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 30 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- PG-TO247-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 145 W
- Product Type
- IGBT Transistors
- Technology
- SI
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Latest Reviews
Thank you very much! Very fast shipping. High quality. Very good seller.
Klimenko Yuriy Mihaylovich
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
fast delivery, item as described, thanks!!
Sandra Scheck
it is safe and sound all, thank you seller!
Arturo Madril
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