- Part Number
- IKQ40N120CH3XKSA1
- Categories
- IGBT Transistors
- RoHS
- Datasheet
- Description
- IGBT Transistors IGBT PRODUCTS
IKQ40N120CH3XKSA1
Images are for reference only
Specifications
- Categories
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 80 A
- Continuous Collector Current Ic Max
- 80 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO247-3-46
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 500 W
- Product Type
- IGBT Transistors
- Technology
- SI
- Unit Weight
Porduct Category
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Latest Reviews
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
Takes 8 days to Japan. Good!
Alex Fragkos
Everything is excellent! recommend this seller!
Stoyan Chaykov
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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