IKQ40N120CT2XKSA1

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Specifications

Categories
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Single
Continuous Collector Current at 25 C
80 A
Continuous Collector Current Ic Max
80 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO247-3-46
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
500 W
Product Type
IGBT Transistors
Technology
SI
Unit Weight

Latest Reviews

it is safe and sound all, thank you seller!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Fast shippng. Good quality. I recomend this seller.

The goods are OK, thank you dealers.

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