RQ3E100MNTB1

Images are for reference only
Part Number
RQ3E100MNTB1
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET

Specifications

Categories
MOSFET
Configuration
Single
Fall Time
6 ns
Id - Continuous Drain Current
10 A
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
9.9 nC
Rds On - Drain-Source Resistance
8.8 mOhms
Rise Time
17 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
31 ns
Typical Turn-On Delay Time
7 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Latest Reviews

Quickly came to CET, all in one package. Look at the rules

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Goods came in two weeks. Well packed. Track number tracked

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