Part Number RQ3E150GNTB Categories MOSFET RoHS Datasheet RQ3E150GNTB Description MOSFET 4.5V Drive Nch MOSFET
Categories MOSFET Configuration Single Fall Time 7.8 ns Forward Transconductance - Min 13.5 S Id - Continuous Drain Current 15 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape Packaging MouseReel Packaging Reel Part # Aliases Pd - Power Dissipation 2 W Product Type MOSFET Qg - Gate Charge 15.3 nC Rds On - Drain-Source Resistance 6.1 mOhms Rise Time 5.8 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 34.4 ns Typical Turn-On Delay Time 11.6 ns Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V