- Part Number
- RQ3E100GNTB
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET 4.5V Drive Nch MOSFET
RQ3E100GNTB
Images are for reference only
Specifications
- Categories
- MOSFET
- Configuration
- Single
- Fall Time
- 3.1 ns
- Forward Transconductance - Min
- 8 s
- Id - Continuous Drain Current
- 10 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Packaging
- Reel
- Part # Aliases
- Pd - Power Dissipation
- 2 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 7.9 nC
- Rds On - Drain-Source Resistance
- 11.7 mOhms
- Rise Time
- 4.3 ns
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 22.4 ns
- Typical Turn-On Delay Time
- 8.4 ns
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Latest Reviews
Отличный продавец . Рекомендую.+++
Yuriy Iovlev
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Thank You all fine, packed very well
Ulrich Bundke
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
fast delivery
Mike Ibarra
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