RQ3E150MNTB1

Images are for reference only
Part Number
RQ3E150MNTB1
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET

Specifications

Categories
MOSFET
Configuration
Single
Fall Time
40 ns
Forward Transconductance - Min
10 s
Id - Continuous Drain Current
15 A
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
4.8 mOhms
Rise Time
13 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
11 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V

Latest Reviews

My package arrived wet, not know where occurs this fact, but working all right

all exactly and work. радиолюбителя useful set to, thank you)

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Works. Find the price of this product is very good

Shipping a little 1 weeks, normal packing, the procedure is complete.

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