SQ3425EV-T1_GE3

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Part Number
SQ3425EV-T1_GE3
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified

Specifications

Categories
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
28 ns
Forward Transconductance - Min
9 S
Id - Continuous Drain Current
7.4 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
10.3 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
49 mOhms
Rise Time
26 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
41 ns
Typical Turn-On Delay Time
11 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
1.4 V

Latest Reviews

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Quickly came to CET, all in one package. Look at the rules

Perfectly.

Goods came in two weeks. Well packed. Track number tracked

Shipping a little 1 weeks, normal packing, the procedure is complete.

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