IKD10N60RAATMA2

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Specifications

Categories
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Single
Continuous Collector Current at 25 C
20 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
150 W
Product Type
IGBT Transistors
Series
RC
Technology
SI
Tradename
TRENCHSTOP

Latest Reviews

it is safe and sound all, thank you seller!

Hello! Order received, very happy. Thank you very much!

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Works. Find the price of this product is very good

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