IKD10N60RATMA1

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Specifications

Categories
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Single
Continuous Collector Current at 25 C
20 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
150 W
Product Type
IGBT Transistors
Series
RC
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Latest Reviews

Teşekkürler

goods very well received very good quality

Everything as it is written in the description of the same deductible prodovtsu deserved 5

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

the photo in comparison with cheap. Delivery fast

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